DOI: 10.11648/j.ajmp.20261504.11 ISSN: 2326-8891

Bunching and Antibunching of Quasiparticles in the Fractional Quantum Hall Effect

Eugene Krasnopevtsev
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The transformation of a two-dimensional electron gas in a semiconductor into a quasiparticle gas at low temperature in a strong magnetic field is considered using the quantum fractional Hall effect. Statistical interference effects—bunching and antibunching of quasiparticles—are studied. The dispersion of the number of quasiparticles in a single state and the correlation between the number of quasiparticles in subsystems are detected, and the quasiparticle bunching coefficient is investigated. The correlation increases with decreasing Landau level filling factor, which is determined by the electron concentration. As the filling factor decreases, the bunching coefficient increases at quasiparticle energies exceeding the chemical potential of the gas. When the Landau level filling factor changes from one to zero, the quasiparticles transform from initial fermions (electrons), obeying the Pauli principle, to bosons, which experience mutual interference attraction and maximum bunching. According to the fractional quantum Hall effect, the Landau level filling factor determines the effective charge of a quasiparticle and the effective magnitude of the external magnetic field. In the bosonic state, a gas of quasiparticles has zero effective charge, zero effective external magnetic field and maximum bunching. Therefore, an external electromagnetic field has no effect on the quasiparticle levels, with the exception of the ground state, and does not cause transitions between them in the form of emission, absorption, or reflection of light. Applied to the electron model of the Universe, it can be assumed that Dark Matter is a gas of Hall quasiparticles formed by ordinary electrons in the bosonic state at ultra-low temperatures. The electron model of the Universe can be studied experimentally.

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