Bridging Triboelectric Bias and Schottky Barrier Modulation: A Perspective on Static M/S Interfaces

ABSTRACT

Metal–semiconductor (M/S) interfaces and Schottky metal–semiconductor–metal (MSM) structures are central to modern electronics, where carrier transport is governed by interfacial barriers and built‐in electric fields. Recent studies on the tribovoltaic effect have demonstrated that direct‐current (DC) generation can emerge from non‐equilibrium carrier excitation and interfacial charge transfer under relative motion. While existing studies have largely focused on dynamic interfaces, growing evidence indicates that sustained mechanical motion of the M/S interface is not a prerequisite for DC output. In static MSM architectures, external perturbations such as liquid contact can induce directional current generation by modulating the interfacial potential. In this Perspective, we connect classical Schottky barrier physics with emerging tribovoltaic phenomena and introduce interfacial potential modulation as a complementary operating regime for MSM systems. We show that dynamic tribovoltaic effects, photovoltaic excitation, and static triboelectric biasing can be understood within a common Schottky MSM framework, where external stimuli reshape the interfacial potential landscape, regulate carrier‐separation conditions, and ultimately produce directional current output. By viewing MSM junctions as stimulus‐addressable interfacial transducers rather than passive rectifiers, this framework highlights new opportunities for self‐powered electronics, adaptive interfaces, and sensing systems operating under static or weakly perturbed conditions.