Breakdown field strength and corona resistance of SiTiB/EP nanocomposites
Boxuan Wang, Hao Chen, Wei Zhao, Ling Weng, Minghao Sun, Jing Zhang, Shuang Yin, Mingyue Jiang, Chunping Wang, Xiangyu Shi Abstract
This paper describes the process of designing and creating SiTiB nanocomposite oxides by utilizing phenyltriethoxysilane (PTES), tributyl borate, and butyl titanate as monomers. The SiTiB/EP nanocomposite was then created using ultrasonic dispersion and thermal curing. Investigation of the effects of different doping levels of SiTiB nanocomposite oxides on the dielectric properties, breakdown strength, corona resistance lifetime, volume resistivity, and electrical aging threshold of nanocomposites. The findings indicate that the introduction of SiTiB nanocomposite oxides in epoxy resins (EPs) does not result in the growth of the dielectric loss of the nanocomposites. With the rise in SiTiB nanocomposite oxide doping, the breakdown strength of SiTiB/EP nanocomposites exhibited a trend of initially augment and then decline, reaching a peak value of 289.2 kV/mm when the doping amount was 6 wt%. The corona‐resistant lifetime of SiTiB/EP nanocomposites exhibited a trend of initially augment and then decline with the rise of SiTiB nanocomposite oxide doping, and the maximum value of corona‐resistant lifetime was 311 min when the doping amount was 6 wt%, which was 5.03 times of the pure EP. The experimental results demonstrate that the incorporation of SiTiB nanocomposite oxides can enhance both the breakdown strength and corona‐resistant lifetime of the nanocomposites, without causing an increase in their dielectric loss.
Highlights
SiTiB composite oxides were designed and synthesized. Analyzing the properties of SiTiB/EP composites with different doping levels. SiTiB/EP composites have low dielectric loss. SiTiB/EP composites have a longer corona‐resistance lifetime. SiTiB/EP composites have high breakdown field strengths.