Atmospheric‐Pressure PECVD of Organosilicon Coatings on Copper: Impact of Ethoxy and Vinyl Groups on the Corrosion Resistance Properties
Dominique Abessolo Ondo, Drialys Cardenas Morcoso, François Loyer, Patrick Choquet, Rodolphe Mauchauffé, Heba H. El‐Maghrabi, Nicolas D. BoscherABSTRACT
Organosilicon coatings were deposited by atmospheric‐pressure plasma‐enhanced chemical vapour deposition (AP‐PECVD) to investigate the influence of precursor chemistry on corrosion protection. Thin films were prepared from tetraethylsilane (TES), tetraethyl orthosilicate (TEOS), and vinyltriethoxysilane (VTEOS) using an argon dielectric barrier discharge at varying precursor saturation ratios. VTEOS exhibited higher growth rates due to additional plasma‐induced free‐radical polymerisation, whereas TES and TEOS followed conventional plasma‐polymerisation. FTIR revealed Si–O–Si networks for TEOS and VTEOS, while TES formed mixed Si–O/Si–C structures. Electrochemical tests showed that ppTES and ppVTEOS coatings significantly enhance corrosion resistance, with ppTES achieving stable, low anodic currents and durable impedance over 24 h. These findings highlight the key role of precursor functionality in designing robust anti‐corrosion coatings.