Application of NiP Alloy for the Production of Conductive and Resistive Layers

This article describes the use of NiP alloy-based layers for the production of conductive and resistive layers. The authors demonstrate the potential of this technology for the production of electrodes in photovoltaic structures, among other applications. To facilitate this use of NiP alloy metallization, a selective metallization process was developed. This process is our own proprietary concept and is not reported elsewhere in the literature. To simplify the process, process modeling was performed, enabling the rapid selection of chemical metallization process parameters. We used ultrasound support to ensure that the electroless metallization process with NiP alloys could be applied to all types of substrates used in electronics (including flexible substrates). The use of ultrasound-assisted electroless metallization technology shortens the production time of silicon electrodes made for photovoltaic cells. Furthermore, we proved that it is possible to produce a metallic layer on flexible substrates. The developed technology enables the production of electrodes used in, for example, flexible photovoltaic cells. This type of metallization is advantageous due to its low cost and simplicity, and its ability to produce both the top and bottom electrodes in a single process, offering a wide range of industrial applications. Our previous work demonstrated the feasibility of applying this process to ceramic and silicon substrates exclusively. This research aligns with current research trends focusing on reducing the production costs of photovoltaic cells and, consequently, minimizing the associated carbon footprint.