DOI: 10.1002/adma.202305648 ISSN:

Ambient−Stable 2D Dion−Jacobson Phase Tin Halide Perovskite Field−Effect Transistors with Mobility Over 1.6 Cm2 V−1 S−1

Xincan Qiu, Jiangnan Xia, Yu Liu, Ping‐An Chen, Lanyu Huang, Huan Wei, Jiaqi Ding, Zhenqi Gong, Xi Zeng, Chengyuan Peng, Chen Chen, Xiao Wang, Lang Jiang, Lei Liao, Yuanyuan Hu
  • Mechanical Engineering
  • Mechanics of Materials
  • General Materials Science


Solution‐processed metal halide perovskites hold immense potential for the advancement of next‐generation field‐effect transistors (FETs). However, the instability of perovskite‐based transistors has impeded their progress and practical applications. Here we report ambient‐stable high‐performance FETs based on two‐dimensional Dion‐Jacobson phase tin halide perovskite BDASnI4 that has high film quality and excellent electrical properties. The perovskite channels are established by engineering the film crystallization process via the employment of ammonium salt interlayers and the incorporation of NH4SCN additives within the precursor solution. The refined FETs demonstrate field‐effect hole mobilities up to 1.61 cm2 V1 s1 and an on/off ratio surpassing 106. Moreover, the devices show impressive operational and environmental stability, and retain their functional performance even after being exposed to ambient conditions with temperature of 45°C and humidity of 45% for over 150 hours.

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