Ambient−Stable 2D Dion−Jacobson Phase Tin Halide Perovskite Field−Effect Transistors with Mobility Over 1.6 Cm² V⁻¹ S⁻¹

Abstract

Solution‐processed metal halide perovskites hold immense potential for the advancement of next‐generation field‐effect transistors (FETs). However, the instability of perovskite‐based transistors has impeded their progress and practical applications. Here we report ambient‐stable high‐performance FETs based on two‐dimensional Dion‐Jacobson phase tin halide perovskite BDASnI₄ that has high film quality and excellent electrical properties. The perovskite channels are established by engineering the film crystallization process via the employment of ammonium salt interlayers and the incorporation of NH₄SCN additives within the precursor solution. The refined FETs demonstrate field‐effect hole mobilities up to 1.61 cm² V⁻¹ s⁻¹ and an on/off ratio surpassing 10⁶. Moreover, the devices show impressive operational and environmental stability, and retain their functional performance even after being exposed to ambient conditions with temperature of 45°C and humidity of 45% for over 150 hours.

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