We report an alignment-free gallium oxide (Ga2O3) heterojunction barrier Schottky (HJBS) power diode, which utilizes the self-assembled Ni nanostructures as in situ masks for the trench etching of Ga2O3 and the subsequent selective-area filling of p-type NiO. By increasing the trench depth to 200 nm, the relevant HJBS diode exhibits improved reverse blocking capabilities including the reduced leakage current density of 10−8 A/cm2 (at a reverse bias of 100 V) and the enhanced breakdown voltage of 748 V, while maintaining the forward biasing characteristics similar to the Schottky barrier diode (SBD). The variation of turn-on voltage and the reverse breakdown features indicate the conversion of the HJBS diodes characteristics from Ni/Ga2O3 SBD to the NiO/Ga2O3 p-n heterojunction diode. The electrical field simulations and experimental facts imply that the remarkable lateral pinch-off effect in the 200-nm trenched diodes shields the electric field in the depletion region underneath the Ni/Ga2O3 Schottky contact. This work provides a straightforward strategy to simplify the fabrication process of Ga2O3-based HJBS diodes with both promising forward and reverse performances.

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