A Review of Non-Laser and Laser Machining for Through-Glass via Fabrication

As semiconductor packaging technology evolves from two-dimensional to three-dimensional integration, the through-glass via (TGV) technique, as a core interconnect method in advanced packaging, is emerging as a strong candidate to replace through-silicon vias (TSVs) and plated through-holes (PTHs) in organic substrates. Glass substrates offer excellent electrical insulation, low dielectric loss, tunable thermal expansion coefficients, and the potential for large-scale panel-level manufacturing. However, issues related to TGV hole quality, metallization uniformity, and thermomechanical reliability remain key bottlenecks limiting their large-scale industrialization. This investigation provides a comparative review of non-laser and laser machining for TGVs to address the above problems. First, the technical background and core advantages of TGVs are outlined. Second, this study details non-laser processing methods, including sandblasting erosion, mechanical drilling, the photosensitive glass method, electrochemical discharge machining (ECDM), deep reactive ion etching (DRIE), and others. Third, laser processing methods, covering laser ablation drilling, laser-induced deep etching (LIDE), femtosecond laser-assisted wet etching and others, are given focus. Moreover, this study analyzes typical applications of TGVs in 3D/2.5D packaging, MEMS devices, optoelectronic integration, and others. In addition, the machining processes of non-laser and laser-based TGVs, such as mechanical machining, ECDM, and LIDE, are compared, and key process challenges, technical trade-offs, and reliability failure mechanisms are discussed. Finally, this review looks ahead to future trends, aiming to provide a systematic technical reference for researchers in the TGV field.