A Review of Defect Formation Mechanisms, Their Impact on Radiation Detection Performance, and Defect Suppression Strategies in Melt-Grown CsPbBr3 Single Crystals

All-inorganic halide perovskite CsPbBr3 single crystals have become an ideal material for high-performance room-temperature radiation detectors, owing to their advantages of high atomic number, strong X-/γ-ray absorption, high carrier mobility, and the feasibility of growing inch-sized large crystals by melt growth. However, various types of point, line, planar, and bulk defects introduced during the high-temperature melt growth process can significantly restrict the sensitivity, detection limit, energy resolution, and long-term stability of the devices through carrier trapping, ion migration, and other mechanisms. On this basis, from the four aspects of purification of raw materials and precursors, atmosphere control and starting-composition compensation, growth-parameter regulation, and annealing and surface passivation, closed-loop defect suppression strategies for suppressing defects and improving crystal quality and device performance are summarized. It aims to provide a reference for the controlled growth of high-quality CsPbBr3 single crystals and the research on high-performance room-temperature radiation detectors.