A Novel Ferroelectric Rashba Semiconductor

Abstract

Fast, reversible, and low‐power manipulation of the spin texture is crucial for next generation spintronic devices like non‐volatile bipolar memories, switchable spin current injectors or spin field effect transistors. Ferroelectric Rashba semiconductors (FERSC) are the ideal class of materials for the realization of such devices. Their ferroelectric character enables an electronic control of the Rashba‐type spin texture by means of the reversible and switchable polarization. Yet, only very few materials have been established to belong to this class of multifunctional materials. Here, Pb_1‐xGe_xTe is unraveled as a novel FERSC system down to nanoscale. The ferroelectric phase transition and concomitant lattice distortion is demonstrated by temperature dependent X‐ray diffraction, and its effect on electronic properties are measured by angle‐resolved photoemission spectroscopy. In few nanometer‐thick epitaxial heterostructures, a large Rashba spin‐splitting is exhibiting a wide tuning range as a function of temperature and Ge content. Our work defines Pb_1‐xGe_xTe as a high‐potential FERSC system for spintronic applications.

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