A Highly Robust MoS2-xOδ Volatile Memtransistor Array for Reservoir Computing

Abstract

As multiterminal electronic devices integrating the functionalities of MOSFETs and memristors, memtransistors are core hardware for constructing complex neuromorphic computing circuits in the post-Moore era. However, random and uncontrollable defects in 2D materials limit existing devices in terms of volatile memory characteristics, robustness and power consumption, hindering their practical application. Here a MoS2-xOδ memtransistor array with controllable vacancy defects achieved through oxygen doping is demonstrated. Under an electric field, the dynamic migration and distribution of vacancies enable precise modulation of the Schottky barrier height, resulting in stable volatile switching with a switching ratio exceeding 105, a device-level energy consumption of 0.55 fJ and switching speed of 4.9 μs. A physical reservoir computing system built on these devices achieves high-precision pattern recognition. The combination of device-level low energy consumption, high robustness and high-switching-ratio volatile memory behavior makes the MoS2-xOδ memtransistor a scalable solution for developing complex neuromorphic circuits.