A Graphical–Analytical Framework for Single-Diode Model Identification Using Datasheet I–V Curves
Manuel J. Heredia-Rios, Luis Hernandez-Matinez, Mónico Linares-Aranda, Javier Flores Méndez, Ana C. Piñón ReyesAccurate extraction of single-diode model (SDM) parameters is essential for photovoltaic performance analysis, especially when only datasheet values or graphical I-V characteristics are available. This study presents a graphical–deterministic parameter extraction framework that combines calibrated curve digitization, local differential analysis, uncertainty-aware slope estimation, and analytical SDM closure. Unlike conventional datasheet-based analytical methods that operate directly from tabulated characteristic points, the proposed approach explicitly incorporates the graphical-to-numerical conversion stage and evaluates its impact on the estimation of the resistive parameters. The shunt and series resistances are obtained as effective local slope estimates near short-circuit and open-circuit conditions, respectively, while the photocurrent, saturation current, and ideality factor are determined from characteristic operating point equations. The ideality factor is solved through a deterministic scalar root procedure within the physically admissible interval 1≤n≤2. The method was evaluated using four photovoltaic devices, including laboratory-scale cells and commercial modules. Normalized reconstruction errors of 0.82% and 0.88% were obtained for the RTC-France cell and the KC200GT module, respectively. The INAOE laboratory cell and the SP450M half-cut module showed higher sensitivity to graphical slope extraction and energetic closure. For the SP450M module, the use of an equivalent series cell number NS,eq = 72 improved agreement with the digitized graphical I–V curve, although the reconstructed maximum power remained below the nominal datasheet value, revealing a graphical/datasheet consistency issue. These results show that the proposed framework is a transparent and reproducible alternative for SDM identification from graphical sources, while also defining its sensitivity limits when applied to low-resolution curves or half-cut high-power modules with complex equivalent electrical configurations.