A full high‐definition quantum dot light‐emitting diode‐on‐silicon microdisplay
Siqi Jia, Depeng Li, Yixing Chen, Guanding Mei, Jingrui Ma, Xiangwei Qu, Haodong Tang, Pai Liu, Bing Xu, Kai Wang, Zhikuan Zhang, Jun Xia, Xiao Wei Sun- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics
- Electronic, Optical and Magnetic Materials
Abstract
We report a 0.39‐in. quantum dot light‐emitting diode (QLED) microdisplay with full high‐definition (FHD, 1920 × 1080) resolution by integrating a red top‐emitting QLED on a complementary metal–oxide–semiconductor (CMOS) backplane. By optimizing the microcavity structure and constructing a suitable energy‐level structure for the QLED devices, the performance of the large‐area (4.9 × 8.7 mm2) top‐emitting device with normal structure reached 13,936 cd/m2 of brightness at 5‐V bias with 13.3% external quantum efficiency (EQE). Notably, the optimal device showed a low turn‐on voltage of 1.7 V, which matched well the voltage output of the CMOS backplane. Our work demonstrates the great promise of QLED microdisplays for applications in head‐mounted augmented reality/virtual reality (AR/VR).