A Comprehensive Review of MOSFET Switching Loss Modelling Techniques for Power Electronic Converters

This paper reviews and discusses the behavioural modelling techniques used to simulate the dynamic behaviour of switching metal-oxide-semiconductor field-effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs) employed in power electronic converters. It is necessary to develop efficient, accurate and computationally fast models for simulating the efficiency and power losses of power converters used in modern applications such as electric vehicles (EVs), solar photovoltaic (PV) systems, wind turbines (WTs) and other energy systems. In this context, the paper focuses on the approaches used to estimate the switching losses of these devices. The paper discusses the main differences, advantages, and drawbacks of the behavioural modelling methods presented in the literature including average models, charge-based models, and other physical models. The paper focuses on the Miller Plateau phenomenon in these devices, as it plays a major role in calculating the switching losses of power electronic converters. The paper provides a comprehensive review of the different modelling methods in terms of accuracy, computational effort, execution speed, and feasibility for hardware-in-the-Loop (HiL) systems. The paper also discusses the modern data-driven methods and their potential integration into future power electronic systems. At the end, the review identifies some research gaps and highlights promising directions for future behavioural modelling research.