DOI: 10.3390/electronics13081499 ISSN: 2079-9292
A 2.25 ppm/°C High-Order Temperature-Segmented Compensation Bandgap Reference
Shichao Jia, Tianchun Ye, Shimao Xiao- Electrical and Electronic Engineering
- Computer Networks and Communications
- Hardware and Architecture
- Signal Processing
- Control and Systems Engineering
This paper presents a bandgap reference (BGR) with high-order temperature-segmented compensation. The compensation signal is generated using the voltage difference between two bipolar junction transistor (BJT) emitter bases, each of which individually loads a proportional-to-absolute temperature (PTAT) current and a zero-to-absolute temperature (ZTAT) current. The proposed BGR achieves a low-temperature coefficient (TC) over a wide temperature range. Simulations using the 0.18 μm Bipolar-CMOS-DMOS process show a typical TC of 2.25 ppm/°C from −40 °C to 125 °C. With an active area of 0.07986 mm2, it consumes 36 μW power under an operating voltage of 1 V. The integrated output noise from 0.1 Hz to 10 Hz is 81.1 μV.