A 209 Nanowatt 0.5 Volt Electronically Tunable Memristor Emulator Based on Bulk‐Driven Operational Transconductance Amplifiers

ABSTRACT

A low‐voltage, ultra‐low power novel bulk‐driven operational transconductance amplifier (BD‐OTA)‐based memristor emulator is presented in this article. The proposed circuit employs two BD‐OTAs, a single capacitor, and an analog multiplier, and is realized in a floating configuration exhibiting flux‐controlled memductance behavior. To increase the order of the memristor formulation and enhance the nonlinear characteristics, a multi‐input bulk‐driven OTA (MI‐BD‐OTA) structure is incorporated. Owing to the bulk‐driven architecture, the proposed design achieves ultra‐low‐power operation with a power consumption of only 209 nW, while offering electronic tunability. The memristive behavior of the proposed emulator is verified through theoretical analysis and comprehensive LTspice simulations. The effects of capacitance variation, input frequency changes, and electronic tunability are examined, along with robustness evaluations including temperature variation, process corner analysis, and Monte Carlo simulations. The simulation results confirm stable and robust memristive operation under various conditions. Experimental validation of the proposed circuit is carried out using commercially available integrated circuits, namely the LM13700 as the OTA and the AD633 as the analog multiplier, and the experimental results are shown to be in good agreement with the theoretical and simulation analyses. Finally, a chaotic system application is implemented using the proposed memristor emulator to demonstrate its practical applicability.