97‐4: Late‐News Paper: Visible Light Detection Enhancement of Indium‐Gallium‐Zinc Oxide Phototransistor with a Formation of p‐n Junction Using PEDOT:PSS Absorption Layer

In this paper, an indium‐gallium‐zinc oxide (IGZO) based phototransistor with an electrohydrodynamic (EHD) jet printed poly (3,4‐ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) absorption layer has been developed for the absorption of visible light. The PEDOT:PSS absorption layerforms a p‐n junction with IGZO, enhancing the photoresponse through selective carrier transfer of photogenerated carriers. As a result, the proposed phototransistor exhibits improved optoelectronic characteristics such as photoresponsivity of 8.40 × 102 A/W, photosensitivity of 1.12 × 107, detectivity of 8.05 × 1011 Jones under the green light (532 nm) illumination of 5 mW/mm².