60‐3: CMOS Compatible microLED Epitaxy for Display Applications

Results from AlGaInP (red) microLED devices deposited by MOCVD on 200 mm Ge substrates will be presented. As a potential replacement for GaAs, Ge offers advantages which include ultra low levels of bulk defectivity, superior mechanical strength and cost competitiveness versus incumbent substrate technologies. Additionally, Ge is a CMOS fab compatible substrate which is a key to accessing high volume manufacturing within existing Si foundries, 300 mm being a future key enabler