DOI: 10.1002/sdtp.16665 ISSN:
51‐3: Copper Thin Film Dry Etching Equipment via ECR Plasma Source
Jin Nyoung Jang, Jong Hwa Lee, Jae Hoon Jung, Kiro Jung, Sangheon Lee, Donghoon Kim, Mun‐Pyo Hong, Sang‐Gab Kim, Soo Ouk Jang, Chiwoo Kim- General Medicine
This paper presents Gen. 2 (370 mm * 470 mm) size thin copper film dry etching performance that is etched by high electron temperature plasma source with low temperature substrate. Dry etching is performed using HCl gas in a reactive ion etching mode. In addition, scanning low temperature susceptor and the electron cyclotron resonance (ECR) plasma produced by rectangular‐type microwave slot antenna (ReSLAN) are used.