DOI: 10.1002/sdtp.16652 ISSN:
47‐4: Highly Sensitive Lateral Poly‐Si PIN Photodiode by Blue Laser Annealing of 400 nm Amorphous Si for Near Infrared Light Sensing
Jiseob Lee, Hyunho Kim, Seongbok Kang, Jinbaek Bae, Suhui Lee, Jin Jang- General Medicine
We report a novel low‐temperature poly‐Si (LTPS) lateral PIN photodiode fabricated using blue laser annealing (BLA) of amorphous Si. The diode exhibits the low off current density of ~ 2.5×10 ‐5 A/cm 2 in dark and a diode factor of 1.47. Under near‐infrared (850 nm) illumination with a power density of 20 mW/cm 2, the photocurrent increases by 1.5×10 3 times at ‐1 V. In addition, we demonstrate that the generated photocurrent can be effectively amplified by a LTPS oxide (LTPO) operational amplifier, yielding the output signal of 17.60 V. Our results suggest that the proposed LTPS‐based photodiode has a great potential for applications in highly sensitive optoelectronic devices.