37.1: Invited Paper: A Room‐Temperature Manufacturing Strategy: Nd:AIZO/Al₂O₃ Thin‐Film Transistor

Metal oxide semiconductors (MOS) have shown great application potential as the active layer of thin film transistors (TFTs). However, MOTFTs usually require an annealing process(≥300°C), which is not conducive to its application in flexible substrates. Here, we establish a Room‐Temperature manufacturing strategy of TFT, which consist of a Nd:AIZO/Al₂O₃ bilayer structure as the active layer. The Nd:AIZO/Al₂O₃ bilayer TFTs without further thermal annealing processing show reasonable device characteristics with mobility(µ_sat) of 28.7 cm² V^‐1 s^‐1, an I_on/I_off ratio of 10⁸, a threshold voltage(V_th) of 0.2 V, and a subthreshold swing(SS) of 0.25 V/decade. The room‐ temperature preparation of Nd:AIZO/Al₂O₃ bilayer TFT is compatible with low‐cost flexible substrates, which is anticipated in the application of large‐size flexible electronic devices, especially of the "green" flexible display area.