DOI: 10.1002/sdtp.16241 ISSN: 0097-966X
16.1: Characteristics of Ln‐doped IZO TFT according to the Change of Indium concentration for DeMUX Applications
Hyun-Sik Seo, Cheng Gong, Zhihui Cai, Zhixiong Jiang, Shan Li, Jun Cheng Xiao, Xin ZHANG, Bin Zhao, Xiaolin Yan- General Medicine
In order to narrow the bezel in high‐end IT and tablets, using switching circuit de‐multiplexer (DeMUX) reduces the number of source D/IC, making small LCD module available. In this study, new oxide TFT material, Ln‐doped InZnO (Ln‐IZO), has been developed. To achieve mobility of > 25cm2 /V.s, study focused on the effect of Indium (In) concentration on the fabrication of Ln‐IZO sputtering target, and fabricated the DeMUX‐equipped 14 inch FHD driven by gate on array (GOA).