The ESR spectrum and spin-lattice relaxation of dislocation spin chains

We study the structure of the ESR spectrum of the dislocation spin system in silicon. It is shown that its features can be explained by the existence of different types of dislocations in the deformed crystal. The temperature dependence of the spin-lattice relaxation time τ is obtained. It is shown that the anomalously weak temperature dependence of τ in the region where Raman scattering dominates is due to dislocation-localized phonons which play the main role in the spin-lattice energy exchange.