Gallium Oxide Heterojunction Diodes for 400C High Temperature Applications
Shahadat H. Sohel, Ramchandra Kotecha, Imran S Khan, Karen N. Heinselman, Sreekant Narumanchi, M Brooks Tellekamp, Andriy Zakutayev- Materials Chemistry
- Electrical and Electronic Engineering
- Surfaces, Coatings and Films
- Surfaces and Interfaces
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
β‐Ga2O3 based semiconductor devices are expected to have significantly improved high‐power and high‐temperature performance due to its ultra‐wide bandgap of close to 5 eV. However, the high‐temperature operation of these ultra‐wide‐bandgap devices is usually limited by the relatively low 1‐2 eV built‐in potential at the Schottky barrier with most high‐work‐function metals. Here, we report heterojunction p‐NiO/n‐β‐Ga2O3 diodes fabrication and optimization for high‐temperature device applications, demonstrating a current rectification ratio (ION/IOFF) of more than 106 at 410°C. The NiO heterojunction diode can achieve higher turn‐on (VON) voltage and lower reverse leakage current compared to the Ni‐based Schottky diode fabricated on the same single crystal β‐Ga2O3 substrate, despite charge transport dominated by interfacial recombination. Electrical characterization and device modeling show that these advantages are due to a higher built‐in potential and additional band offset. These results suggest that heterojunction p‐n diodes based on β‐Ga2O3 can significantly improve high‐temperature electronic device and sensor performance.
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